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ATMI reduces GaN substrate defect density

ATMI says that it has reduced the uniform dislocation density in its GaN substrates by an order of magnitude.

Materials supplier ATMI, Inc. says that it has shipped improved two-inch diameter GaN substrates to “major consumer electronics companies”.

The Dansbury, CT, company says that unlike other GaN wafer products that only have a low dislocation density in select regions, its new free-standing GaN substrates have a uniform dislocation density of 106 cm-2.

“We’ve delivered our GaN wafers into every major semiconductor region in the world, and the early feedback is very good, with customers obtaining improved device performance on our substrates,” said George Brandes, director of ATMI s GaN venture.

Optical data storage using GaN-based blue diode lasers is well on the way to commercialization. In high-performance electronics, GaN could potentially double the effective range for radar and satellites while increasing bandwidth.

“We are confident GaN wafers will help to allow full realization of the enormous benefits of blue laser capabilities, and we are producing [these] wafers in large volumes,” said Bob Vaudo, manager of ATMI GaN Substrates.

“Our improved growth process reduces dislocation density by an order of magnitude. The wafers now meet the critical parameters needed to extend laser lifetime and performance. In high performance electronics, we have developed semi-insulating GaN wafers and are beginning to offer them to select R&D customers in engineering quantities.”

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