+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
 
News Article

InP-based optical interconnect project kicks off

The European Union, IMEC, ST Microelectronics and others have begun a three-year project to integrate InP-based optical interconnects and silicon ICs.

The European Union, IMEC, ST Microelectronics and others have ploughed €4.2 million into a three-year project to integrate InP-based optical interconnects and silicon ICs.

Known as the Photonic Interconnect Layer on CMOS by wafer-scale integration (PICMOS), the project is an attempt to solve the bottleneck expected from conventional interconnects in future electronic circuits.

Co-ordinated by Belgian microelectronics research specialist IMEC, and including seven organizations in all, the project team will look at two different integration strategies.

Both the strategies will be based on a planar interconnect layer built from a high-density optical wiring circuit integrated with InP-based sources and detectors.

The first strategy involves a wafer-to-wafer bond technology where the photonic interconnect layer is fabricated in parallel with the electronic circuit wafer. Both wafers would then be bonded together.

The second strategy will be an “above-IC” approach, where the photonic layer is fabricated directly on top of the electronic circuit.

According to the project abstract, III-V epi material for the active photonic devices will be bonded on top of the waveguide circuits before the substrate is removed. The active devices will then be defined in the remaining membrane.

To combat the large size difference between InP and silicon wafers and the limited space available to the active photonic devices, the project team says that it will develop a rapid die-to-wafer bonding step.

The seven partners involved in PICMOS are: IMEC, ST Microelectronics, the University of Ghent in Belgium, the Grenoble-based CEA/LETI laboratory and Tracit Technologies, the University of Lyon in France, the Technical University of Eindhoven in The Netherlands and the Greek National Center for Scientific Research.

×
Search the news archive

To close this popup you can press escape or click the close icon.
×
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • View all news 22645 more articles
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: