SET wins contracts for device R&D on AlN
The Missile Defense Agency is funding work on transistors, while DARPA is supporting the development of ultraviolet emitters.
These two-year programs are focused on improved performance of the devices fabricated on very-low defect density AlN substrates.
“This is a huge boost to our efforts in developing this new and exciting technology,” says Remis Gaska, president and CEO of SET. “We hope to advance the quality of epitaxial materials for fabrication of III-Nitride based electronic and optoelectronic devices to a whole new level.”
SET is purchasing novel single crystal bulk AlN substrates from Crystal IS, Inc. based in Latham, NY. The two companies started their collaborative effort on evaluating AlN substrates for growth of epitaxial wafers almost two years ago and jointly demonstrated stimulated emission at 260 nm.