Filtronic extends 3G base station amplifier deal
Filtronic, the UK-based GaAs device manufacturer and foundry, is to begin manufacturing production quantities of integrated RF head units for 3G wireless base stations in the second half of this year.
The RF units will include PAs based on high-power GaAs PHEMTs that Filtronic will make at its 6-inch wafer fabrication facility in Newton Aycliffe, UK.
Two versions of the RF head are required, but before it can commence volume deliveries, Filtronic has to “finalize some outstanding technical and commercial matters”.
Filtronic has reorganized its business into four segments as a result of the supply deal.
David Rhodes, Filtronic’s executive chairman, said that the reorganization would “ensure that the company is best positioned to…move from the development stage into production with a broad range of new products”.
“Many of these will incorporate compound semiconductor devices from our fabrication facility in Newton Aycliffe,” he added.
Compound semiconductor device fabrication now comes under the umbrella of the “Integrated Products” business segment, which also incorporates the former broadband access and electronic warfare units.
“This business will be responsible for the development, manufacture and supply of compound semiconductor devices, which will increasingly form the basis of higher-value Filtronic products,” said Rhodes.
In its interim results for the six months ended 30 November 2003, the Integrated Products segment had revenue of £18.7 million ($34.1 million), up £1.3 million on the previous year. Most of this revenue comes from sales of defense products.
