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GaAs foundry offers improved PA performance

TriQuint has tailored its latest GaAs HBT power amplifier foundry process for high-power applications such as GSM and CDMA.

TriQuint is to roll out a new foundry process for high-volume InGaP heterostructure bipolar transistor (HBT) fabrication at its 6-inch GaAs wafer facility in Oregon later this year.

According to the Hillsboro, OR, company, the “TQHBT3” process will enable designers of RF power amplifiers (PAs) used in cell phone, wireless local area network (WLAN) and so-called Wi-max (broadband wireless) applications to improve the gain, power level and efficiency for a given device size.

The foundry process is an extension of TriQuint’s current HBT offering, which has been in high-volume production for over three years.

Rob Christ, TriQuint’s foundry marketing director, said: “The [new] process offers our foundry customers improved performance. TQHBT3 features higher beta, more gain per stage, improved power-added efficiency and world-class ruggedness.”

Other improvements have been made in thermal uniformity, while there is higher efficiency in linear and saturated modes and the transistor footprint is smaller.

The new foundry process is designed for both 2 µm and 3 µm emitter-width transistors. It is ideally suited for high-power and high-ruggedness applications, like GSM and CDMA PAs, says Christ.

“TQHBT3 has 3 µm emitter transistors with RF power performance equal to or better than the best 2 µm foundry processes,” he added.

Featuring a maximum available gain of more than 22dB at 6 GHz with a 3 µm emitter, the process will be launched in the third calendar quarter of this year.

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