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Akzo Nobel's TBP simplifies red laser epitaxy

Akzo Nobel and EpiWorks reveal the benefits of TBP for the growth of red laser epiwafers.

A collaboration between Akzo Nobel-High Purity Metalorganics (HPMO), and EpiWorks, a developer and manufacturer of epiwafers, has produced AlGaInP-based laser material using tertiarybutylphosphine (TBP).

The benefits of TBP over phosphine (the standard precursor) for volume production were clearly highlighted, with no maintenance required during the entire development campaign of 30 runs.

In addition, existing equipment required no modification, and little or no evidence of accumulation of white or red phosphorous in the either phosphorous traps or tubing leading to the traps were observed.

In stark contrast, Akzo Nobel HMPO estimates that 5-10 preventative maintenance cycles would have been required for the same number of runs had it used phosphine instead. Also, for typical growth conditions (V/III ratios of 200-300) for red laser material, phosphine consumption would have exceeded that of TBP.

The device structure grown was a previously published red laser design, intended to operate at 670nm. Akzo Nobel HPMO claims that the TBP process enabled high-quality AlGaInP layers with several different Al compositions to be grown at low temperatures and relatively low V/III ratios.

Optimization of the multi-quantum well region led to PL FWHM values of 32meV, and PL intensities greater than those observed in material produced using the phosphine-based process.

Akzo Nobel HPMO is yet to receive device performance results.

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