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In brief: DVD Forum, Anadigics, Epiworks

The DVD Forum has endorsed more HD-DVD standards and agreed an official logo for the format, Anadigics has appointed a distributor for Japan, and researchers in the US have fabricated a new type of VCSEL using wafers supplied by Epiworks.

DVD Forum adopts specifications
High-definition DVD (HD DVD) has taken another step towards commercialization with the DVD Forum endorsing recordable and rewritable formats.

HD DVD-R discs will have a capacity of 15 GB and allow one recording, while the rewritable HD DVD-RW will allow multiple recording and erasing of data on a 20 GB disc. Read-only HD DVD had already been approved by the industry group.

The approved formats now have some official logos after the DVD Forum also approved these.

With the ground rules in place, supporters of the HD DVD format, who number Toshiba and NEC among their ranks, are free to release recorders, players and software.

According to recent reports, both of the companies plan to begin making GaN-based blue lasers next year with a view to launching the technology in time for the 2005 holiday market.

Anadigics appoints Japanese distributor
Following recent success in Asian markets, US-based RFIC manufacturer Anadigics has appointed Takachiho Koheki as its Japanese distributor.

The distributor will deploy the whole range of Anadigics wireless and broadband products to electronics manufacturers in Japan, with a focus on targeting highly-integrated multimedia phones for the emerging 3G sector.

Epiworks wafers used to make novel VCSEL
Researchers in the US have fabricated a novel VCSEL structure based on epiwafers made by Epiworks.

Kent Choquette and colleagues at the University of Illinois at Urbana-Champaign have completed the first stage of a program to develop a so-called "n-up" VCSEL. In this structure, a p-doped GaAs substrate is used rather than the more conventional n-doped.

The 850 nm VCSEL produced by the team has a threshold current of 800 µA, and an output power of 6 mW at a drive current of 10 mA.

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