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In brief: K2 Optronics, nLight, MBE award

Laser manufacturer K2 Optronics attracts more funding, nLight produces a high-power diode laser bar and UCSB's Art Gossard wins the North American MBE award for 2004.

K2 scales funding heights
K2 Optronics, the fabless semiconductor laser provider based in Sunnyvale, CA, has attracted a further $6.4 million in financing, bringing total investment in the company to over $45 million.

K2 specializes in external-cavity lasers (ECLs) for fiber-optic telecom and CATV applications. The lasers are said to be the only sources to combine direct modulation with long reach, high power, low chirp, low distortion and a narrow laser linewidth.

The company will use the extra funds to accelerate new product introduction, said CEO Raj Kapany.

nLight claims power milestone
Laser manufacturer nLight says that it has made a single 1cm diode laser bar emit 364 W in continuous-wave mode.

The 808 nm emission is said to represent a major milestone, said Jason Farmer, the Vancouver, WA, company s VP of advanced technology.

nLight s high-power devices should open up more opportunities for the company in markets that use the devices to optically pump crystals to generate very high power laser sources. These include both commercial and military systems.

The firm is one of a number of companies funded by DARPA s super high efficiency high-power diodes (SHEDS) program, along with Wisconsin-based Alfalight, which recently announced that it had made a laser diode bar operating at 73% efficiency at 976 nm.

Veeco-sponsored award goes to UCSB scientist
The North American MBE organization has named Art Gossard, a professor of electrical and computer engineering at the University of California, Santa Barbara (UCSB), as the winner of its latest award.

Gossard pioneered work on modulation-doped heterostructures, in particular high-mobility two-dimensional electron gases. His technological breakthroughs have formed the basis of many practical III-V devices widely used today, such as HEMTs.

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