Matsushita develops GaN-based power transistors
The device feature source-via-grounding (SVG) technology allows the transistor source electrode to be connected to the silicon substrate through holes formed on the surface side. This approach eliminates source wires, bonding and pads from the substrate surface, thereby reducing chip size and wire inductance.
Matsushita s FETs, which were fabricated on 4 inch silicon substrates, have a breakdown voltage of 350 V and can handle currents of up to 150 A. By using its SVG technology Matsushita also claims to have reduced the on-resistance of its FETs from 53 mΩ to 14 mΩ.
The GaN-based FETs could be used as a low-loss power switching device in applications such as invertors for electrical appliances, hybrid cars and power supplies, says the company.
Matsushita claims that its new transistors, which can be substituted for at least ten parallel-connected silicon power MOSFETs, can deliver both power savings and miniaturization of electronic products. According to the company, using a silicon substrate means that its FET material is also over one hundred times cheaper than comparable SiC power MOSFETs.
Matsushita has applied for 39 patents in Japan and 26 overseas that relate to its transistor, which it developed in partnership with the Nagoya Institute of Technology.
