News Article
Switches to boost GaAs use in cellphones
The GaAs content in cellular handsets will increase by over 40 percent over the next three years, says RF Micro Devices.
By Michael Hatcher in New Orleans
Increasing deployment of GaAs PHEMTs in antenna switches will drive a substantial increase in the amount of GaAs used in future cellphone handsets.
Increasing deployment of GaAs PHEMTs in antenna switches will drive a substantial increase in the amount of GaAs used in future cellphone handsets.
Paul Augustine, the general manager of RFMD s Nokia product line, told CS Mantech delegates in New Orleans, Louisiana, that GaAs content would grow by 40 percent to around 3.4 mm2 per phone by 2007 and to 4mm2 in 2009.
While PIN diodes have been the incumbent technology in most switch applications until now, these devices are too large for highly-integrated modules, which require six throw switches.
"GaAs PHEMT is positioned very well to capture significant antenna switch volumes during the next few years," said Augustine.
He added that cost-effective integration of power amplifiers will be the critical factor as handset OEMs demand smaller modules and significantly fewer components in future high-end phone designs.
