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Toshiba and TriQuint target WiMAX with GaAs FETs

At the International Microwave Symposium, compound semiconductor device makers continue to focus on broadband wireless with TriQuint and Toshiba launching new products aimed at WiMAX and similar applications.

RF chip manufacturers TriQuint Semiconductor and Toshiba America Electronic Components (TAEC) have both released new GaAs products aimed at broadband wireless access applications.

Launched at the International Microwave Symposium in Long Beach, CA, this week, the GaAs FETs have been designed for both WiMAX and other broadband protocols.

TriQuint revealed two new power amplifiers (PAs) manufactured using its 0.5µm gate length HFET process that operate in the 3-4 GHz range. One is rated at 10 W and the other at 5.6 W.

According to Dan Green, TriQuint's marketing director for broadband products, the PAs are competitively priced and a simple layout means that only two external components are needed to produce a 200 MHz bandwidth.

Green added that TriQuint would shortly be releasing MMIC power amplifiers and drivers to complement the existing product range in the 2.5 GHz, 3.5 GHz and 5.8 GHz bands.

Meanwhile, TAEC has released GaAs FETs designed for fixed wireless access applications operating at 3.5 GHz and 5 GHz.

Three of TAEC's new transistors operate in the 5.3-5.9 GHz frequency range.

"Recent progress in standardization of broadband wireless is expected to spur significant interest and growth in this market," said Toshi Nakamura, TAEC's business development manager for microwave devices.

"Recent support for WiMAX and unlicensed National Information Infrastructure fixed wireless access systems in leading PC and network chipset solutions is likely to help expand the market "“ particularly in regions without widespread availability of DSL or cable."

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