TDI unveils InN-on-sapphire templates
US-based manufacturer of template substrates Technologies and Devices International (TDI) has produced InN epitaxial layers and structures using its hydride vapor phase epitaxial (HVPE) technology.
The 2 inch diameter InN-on-sapphire templates and InN/GaN heterostructures will be demonstrated at the 6th International Conference on Nitride Semiconductors in Bremen, Germany.
"This result is an important step towards HVPE technology for InN-containing materials and devices including high brightness blue, ultraviolet and white LEDs," claimed Alexander Syrkin, TDI's crystal growth specialist.
TDI has previously produced GaN-based devices with its HVPE technology (see related story).
The latest process, developed in collaboration with the Army Research Laboratory and Texas Technical University, enables the company to deposit either InN epitaxial layers or three-dimensional nanostructures in a controllable manner.
