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Infineon threatens GaAs with SiGe:carbon HBTs

Germany-based chip giant Infineon Technologies says that its new SiGe HBTs can match the performance of GaAs transistors.

Infineon Technologies has unveiled a new manufacturing process for making SiGe transistors that it claims can match the performance of GaAs.

According to the Munich-based chip manufacturer, the SiGe:carbon HBTs provide a combination of high gain and low noise in the 10 GHz frequency range.

As a result, Infineon says that these transistors will be able to penetrate wireless connectivity and broadband wireless communication applications that GaAs companies are also seeking to dominate.

The key to Infineon's SiGe:carbon process is a significant reduction in base resistance, which lowers noise levels at the important frequencies.

A new method of reducing parasitic ground inductance has also been developed, which leads to the high gain figure of 19 dB at 6 GHz.

"The introduction of the [new] series is a further milestone in expanding Infineon's high-performance RF transistor portfolio," said Michael Mauer, the German company's head of product marketing for silicon devices.

"By addressing specific front-end requirements, such as low noise figures and high gain, the new transistors are the ideal solution for current and future wireless applications at 10 GHz or more," added Mauer.

Infineon's announcement comes only a few weeks after IBM revealed details of its fourth-generation SiGe BiCMOS process, which is aimed at similar applications in wireless communications and automotive radar.

Both of the technologies could prove to be tough products for GaAs device manufacturers to compete against.

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