Cree makes 4-inch SiC material available to all
Cree is now selling 4-inch (100 mm) n-type SiC substrates and epitaxy material commercially.
Previously, the Durham, NC, materials supplier and chip manufacturer had offered 3-inch SiC material as standard, although it has been working on the larger size through a development program with the Air Force Research Laboratory (see related story).
Cree, which announced the move at the International Conference on Silicon Carbide and Related Materials (ICSCRM) conference held in Pittsburgh, PA, says that the larger format could allow production of twice as many devices per wafer compared with the 3-inch material.
"Cree's launch of 4-inch substrates and epitaxy establishes that SiC can be a high-volume, production-oriented material within the semiconductor industry," said Lyn Rockas, the general manager of Cree Materials.
"It demonstrates Cree's technology and commitment to develop material products targeted to the needs of the commercial market."
SiC material and device development has taken place largely under the wing of the US military community, with the Defense Advanced Research Projects Agency, the Army Research Laboratory and others providing much of the funding.
