In brief: Aixtron, Intel, and QinetiQ
Germany-based epitaxial equipment manufacturer Aixtron has teamed up with National Cheng Kung University (NCKU) in Taiwan to develop a nitride-based photodetector.
The project's goal is to produce AlGaN structures that will improve the quantum efficiency of photodetectors at wavelengths below 300 nm.
The structures will be grown at NCKU using an Aixtron AIX 200RF horizontal MOCVD reactor.
Intel turns to InSb for high-speed computingScientists from Intel and UK-based QinetiQ have presented a paper at the International Electron Devices Meeting (IEDM) in Washington DC describing the fabrication of the first enhancement mode (e-mode) and depletion mode (d-mode) InSb quantum well (QW) FET.
The researchers claim that the pair of devices, which both have fT values above 250 GHz and a 85 nm gate length, have enabled the technology to be a promising candidate for future high speed, low power logic applications.
Prior to this work QWFETs had only been produced in d-mode format, but both versions of the device are needed for high-speed computing applications.
The research team compared the performance of the InSb devices with an advanced silicon MOSFET. The QWFET delivered a 50% improvement in switching speed, and a 6-10 fold reduction in DC power dissipation.
LEDs to penetrate SSL from 2007In 2007 GaN-based LEDs will deliver a higher luminous efficiency than fluorescents, and will start impacting the solid state lighting market, according to the analyst Research and Markets.
The Ireland-based company predicts that annual demand for general illumination will hit 3.6 million units in 2010, and 4-7 million units after 2020.
