APT breaks ground on SiC device facility
High-power semiconductor specialist Advanced Power Technology (APT) has begun building its SiC manufacturing facility in Bend, OR.
The company, which will soon be acquired by California-based Microsemi, recently signed an exclusive foundry-supplier licensing agreement over SiC technology with defense contracting giant Northrop Grumman.
Military applications of SiC include radar, hybrid power systems, electric power control and distribution, electronic jamming, and wideband communications systems.
The licensing agreement also allows APT to develop commercial applications of SiC microelectronics, such as more efficient electric power transmission, PC and server power supplies, and hybrid electric vehicles.
However, APT says that it will not be making any SiC devices for the advanced transformers that Northrop Grumman s electronic systems division is due to supply to the US Navy (see related story).
These transformers will be based on SiC devices including MOSFETs, insulated-gate bipolar transistors and PIN diodes. Because of SiC's resistance to high temperatures, the cooling system requirements for such transformers should be reduced greatly.
Microsemi CEO James Peterson and local Senator Gordon Smith both attended the ground-breaking ceremony at ATP s Oregon site.
