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Polish institute extends capability with SiC tool

The Institute of Electronic Materials Technology increases its range of expertise with a new epitaxy tool from Epigress for SiC device development.

Aixtron subsidiary Epigress has sold an MOCVD tool designed for SiC epitaxy to the Institute of Electronic Materials Technology (ITME) in Warsaw, Poland.

ITME already carries out plenty of compound semiconductor research and pilot production with its existing Aixtron machines designed for GaInAsP and GaN applications.

Slated for delivery in the fourth quarter of this year, the Epigress tool will add to that existing expertise and be used to grow n-type and p-type SiC layers for high-power and high-frequency devices.

ITME, which was founded in 1979, is one of Poland's leading III-V materials research centers.

As well as carrying out epitaxy and device studies, it produces and sells a range of compound substrate materials grown by the liquid encapsulated Czochralski (LEC) method.

These include GaAs crystals measuring up to 4 inches in diameter, 2-inch InP, 3-inch GaP and 2-inch InAs.

ITME has also developed AlGaN/GaN-based ultraviolet sensors that it sells on a commercial basis.

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