Freescale scales up InGaP amplifier offering
Freescale Semiconductor has unveiled four new broadband GaAs- and InGaP-based RF amplifiers suitable for a wide range of applications.
The Austin, TX, chip giant says that the new devices deliver high gain and linearity over bandwidths ranging from DC up to 6 GHz.
The specific chip types include a GaAs HFET, an InGaP HFET and two InGaP HBTs.
Sampling begins over the next couple of months, with volume production scheduled to start in May and June this year.
Applications ranging from WiMAX base stations to meter readers, set-top boxes, RFID readers and anything requiring a cost-effective, small-signal gain source can benefit from the chips, says the company.
The devices are also the first of Freescale s to feature active biasing technology. Active biasing reduces performance variations caused by changes in temperature and supply voltage, and is also said to make life easier for RF system designers.
Freescale already sells a family of GaAs devices, and the company s portfolio of general-purpose amplifiers now comprises 17 distinct devices and includes HFETs for greater ruggedness and higher linearity for the general-purpose market.
"The addition of these [InGaP] devices strengthens our portfolio and allows designers to meet a greater variety of system and market requirements," said Gavin Woods, vice president and general manager, RF Division, Freescale Semiconductor.
"Customers using these amplifiers will benefit from Freescale s worldwide technical support and our ability to deliver large volumes consistently."