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Nitronex touts 48V chip technology for wireless

The GaN-on-silicon specialist is set to begin sampling a new high-voltage family of products in March, with production slated for the third quarter of 2007.

Nitronex, the Raleigh, NC, firm that specializes in GaN-on-silicon transistor technology, is set to launch a new high-voltage family of products for future wireless network infrastructure build-outs.

Based on its existing NRF1 process technology (see related story), initial products in the new range will operate at 48 V, and across the 1.8-2.2 GHz and 2.3-2.7 GHz frequency ranges.

The products have been specifically designed for use in WiMAX and thrid-generation cellular applications.

According to Chris Rauh, VP of sales and marketing at Nitronex, the higher voltage rating allows devices to operate with reduced memory effects, a wider RF output bandwidth, and easier matching.

Rauh adds that the products, which will be available in powers ranging from 5 W to 200 W, will offer power amplifier (PA) designers a power and bandwidth combination not available with more conventional materials.

For new PA designs, the advantages of GaN-on-silicon should translate to improved system efficiency and lower operating costs.

And for existing PA designs, says Rauh, the product line should extend the service life of wireless systems by improving their efficiency and bandwidth.

Nitronex said that target specifications of the new platform will be available in late January, with sampling scheduled to begin in March and full production qualification set to follow in the third quarter of 2007.

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