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News Article

Sirenza delivers GaN power and noise record

Tuesday 19th June 2007

Built at Northrop Grumman Space and Technology, Sirenza's new HEMT promises better performance for data transmission and military applications.

Sirenza claims that it has produced the first GaN power amplifier (PA) with an output power above 2 W and a noise factor (NF) below 1 dB, encompassing the 0.2 to 8 GHz range.

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