In brief: Arima, Aixtron, Cree, Crystal IS
Arima bolsters GaN capacity
Taiwanese LED maker Arima is buying an Aixtron 2800G4 HT MOCVD system for the development and manufacture of ultra-high brightness LEDs.
Arima s second order in a month from the German equipment manufacturer provides it with the highest GaN wafer capacity for any reactor on the market.
“For the shorter as well as longer wavelength HB-LEDs, our production capabilities rely strongly on Aixtron technology,” said P. J. Wang, Arima s president.
Cree seals Japanese power rectifier deal
The SiC arm of Durham, North Carolina's Cree has signed a deal to work on SiC power rectifiers with a world-leader in silicon Schottky diodes.
Nihon Inter Electronics Corporation (NIEC), whose headquarters are in Hadano City, Japan, will use its experience in the market to sell SiC die made by Cree.
“Our agreement with NIEC will allow us access to their extensive marketing and sales channels in Japan, and is consistent with our current strategy to create a more global sales and marketing presence,” said John Palmour, Cree s executive vice-president for advanced devices.
Crystal IS sees the future in UV LEDs
Crystal IS is using its AlN expertise to expand beyond the manufacture of substrates, beginning development of deep-UV LEDs.
The Albany, New York, company has purchased two MOCVD reactors to develop and manufacture 280 nm LEDs, which it aims to sample later this year and bring to market in early 2008.
Crystal IS says that it will be able to offer significantly better efficiency and lifetime than existing UV LEDs, which are grown on sapphire, thanks to the lower dislocation density resulting from growth on its AlN substrates.
