TDI makes device-quality InGaN using HVPE
TDI has used HVPE to grow device-quality InGaN for the first time, and enforced its claim by using it to produce green and blue LEDs.
The Silver Spring, Maryland, nitride semiconductor specialist presented its results at the 4th China International Forum & Exhibition on Solid State Lighting in Shanghai, which ran from August 22-24.
The demonstrated LEDs emit blue light between 450-490 nm and green light between 490-510 nm, although as proof-of-principle structures they only operate at the µW power level.
Despite the momentum behind the existing approaches to LED production, TDI asserts that its improvements in material quality combine with the potential economy of HVPE to make a very attractive offering.
“If working on long runs and large scale, HVPE has proved that it is a much cheaper method,” said Alexander Syrkin, senior growth specialist at TDI.
“If you need to grow a thick foundation layer by the other methods [like MOCVD], it isn t practical,” Syrkin said. “You need 10-20 hours to grow 10-20 microns, and by HVPE you make it in 10 minutes.”
Syrkin told compoundsemiconductor.net that TDI is now working to turn its recent progress into commercial products, although which form these might take has not yet been decided.
He sees potential for commercialization of the growth technology, or development of templates specifically for LED manufacture, and said that TDI were “looking at” actual production of LEDs.
It seems, at least, that TDI will continue the material development underlying its LED technology, according to R&D director, Alexander Usikov.
“We are working to increase InGaN content in the LED structures toward fabrication of yellow and potentially red LEDs,” he said.
• TDI's LED results will also be presented at the 7th International Conference on Nitride Semiconductors in Las Vegas (16-21 September) and the 1st International Conference on White LEDs and Solid State Lighting in Tokyo (26-30 November).
