+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
News Article

Compound semiconductors 'could help with research limitations'

Compound semiconductors could help the industry deal with current physical limitations of some research, it has been suggested.
DataWeek highlighted a paper – entitled Seamless On-Wafer Integration of Si MOSFETs and GaN HEMTs – which was produced by investigators at the Massachusetts Institute of Technology.

The scientists claim that a new generation of hybrid microchips can be formed if semiconductor materials that possess different and potentially complementary properties are combined.

DataWeek explained: "Compound semiconductors such as gallium nitride (GaN) or indium phosphide have properties such as … being capable of handling higher power … that make them superior to silicon for a variety of applications."

It added that combining semiconductors could create a high electron mobility transistor.

However, such technology would need to be scaled up six times or more before it could be used in a commercial context, the online resource concluded.

The research paper was published in the October 2009 issue of IEEE Electron Device Letters.
Search the news archive

To close this popup you can press escape or click the close icon.
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.

Please subscribe me to:


You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: