News Article
Semiconductor researchers develop "fin-like" transistor
Semiconductor researchers have developed a transistor made from indium-gallium-arsenide to help address the challenges that Moore's law sets.
Semiconductor researchers at Purdue University are in the process of developing a new type of transistor which could enable engineers to create more compact and faster circuits.
The researchers have developed the new semiconductor which uses a "fin-like" structure - rather than the conventional flat design - made from indium-gallium-arsenide, by using atomic layer deposition technology.
According to the higher education establishment, the new semiconductors could help the electronics industry meet the challenges set by Moore's law, which states that miniaturisation of components will allow the number of transistors on an integrated circuit to double roughly every two years, without the circuit increasing in size.
However, it has become increasingly difficult to continue to miniaturise electronic devices which are made out of conventional silicon-based semiconductors - leading to suggestions that indium-gallium-arsenide could address this.
"As gate lengths are made smaller than 22 nanometres, the silicon dioxide insulator used in conventional transistors fails to perform properly and is said to 'leak' electrical charge," the university noted.
The Nano-Science Center recently reported that combining the semiconductors gallium-indium-arsenide and indium arsenide in the same nanowire could enable more energy to be captured.
The researchers have developed the new semiconductor which uses a "fin-like" structure - rather than the conventional flat design - made from indium-gallium-arsenide, by using atomic layer deposition technology.
According to the higher education establishment, the new semiconductors could help the electronics industry meet the challenges set by Moore's law, which states that miniaturisation of components will allow the number of transistors on an integrated circuit to double roughly every two years, without the circuit increasing in size.
However, it has become increasingly difficult to continue to miniaturise electronic devices which are made out of conventional silicon-based semiconductors - leading to suggestions that indium-gallium-arsenide could address this.
"As gate lengths are made smaller than 22 nanometres, the silicon dioxide insulator used in conventional transistors fails to perform properly and is said to 'leak' electrical charge," the university noted.
The Nano-Science Center recently reported that combining the semiconductors gallium-indium-arsenide and indium arsenide in the same nanowire could enable more energy to be captured.
