News Article
Semiconductor fabrication 'developed for future applications'
Toshiba has announced 20-nanometre scale generation developments for semiconductor fabrication.
Semiconductor fabrication has been improved after Toshiba Corporation announced it has developed the world s first 20-nanometre scale generation process technology - a high-resolution photoresist needed for the future application of extreme ultraviolet (EUV) lithography.
As wiring densities increase and semiconductor process technology advances, conventional base materials used for semiconductors - such as polymer photoresists - will have a number of challenges to overcome, including difficulties in achieving required resolutions, by the time 20-nanometre scale generation is in place, the organisation explained.
Photoresists are needed which can be used in both negative and positive-tone processes for semiconductor circuit patterning. Toshiba has developed a low molecular resist - a derivative of truxene - for EUV generation and applied it to negative tone process and has been able to form a test pattern in the 20-nanometre scale generation.
"Toshiba will further improve the performance of the molecular resist and apply it to the fabrication of 20-nanometre scale generation large scale integrations," the organisation noted.
NAND flash memory was invented by Toshiba, which is one of the largest semiconductor manufacturers in the world, the enterprise claimed.
As wiring densities increase and semiconductor process technology advances, conventional base materials used for semiconductors - such as polymer photoresists - will have a number of challenges to overcome, including difficulties in achieving required resolutions, by the time 20-nanometre scale generation is in place, the organisation explained.
Photoresists are needed which can be used in both negative and positive-tone processes for semiconductor circuit patterning. Toshiba has developed a low molecular resist - a derivative of truxene - for EUV generation and applied it to negative tone process and has been able to form a test pattern in the 20-nanometre scale generation.
"Toshiba will further improve the performance of the molecular resist and apply it to the fabrication of 20-nanometre scale generation large scale integrations," the organisation noted.
NAND flash memory was invented by Toshiba, which is one of the largest semiconductor manufacturers in the world, the enterprise claimed.
