News Article

Power Electronics Japan Forum 2010 From Silicon To SiC And GaN

Yole Développement and its Japanese partner, Global Information, present the Power Electronics Japan Forum, on June 1&2, 2010.

Power electronics are currently facing a huge transition as the demand for efficient power conversion systems is increasing along with the “Green-Tech" introduction. The Green revolution is now impacting all application fields in power electronics pushed by regulations: from low power with the need for improved cell-phone battery chargers; to mid-range where motor control, home appliances, PV inverters, EV/HEV and white goods may consume less energy; to higher power in which train traction, wind turbines and energy T&D are expecting new solutions to reduce conversion losses.

This battle for an efficient world starts at the heart of every system: the power devices. These devices today are mainly based on silicon technology. Silicon diodes and silicon transistors (MOSFET, IGBT, Thyristors…) are the key components and are constantly improving their performance, reliability, life-time and efficiency. However, year-to-year improvements are slowing as they approach maximum theoretical specs.

New materials have emerged in recent years and some may be able to displace existing silicon devices with enhanced characteristics, less loss, higher operation temperature, longer life-time and greater robustness to cycles. SiC was the first technology commercially introduced in the early 2000’s and GaN is now coming to market as well.

This 2-day seminar will begin with a review the main market metrics from devices to applications and current state of the art of the Silicon-based power electronics. It will then explore the capabilities of GaN and SiC to disrupt that equilibrium and will highlight the recent developments in a selection of applications.
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