IQE’s Wafer Technology division launches new 4” GaSb product range
GaSb materials are used in the manufacture of a wide range of products including infrared laser diodes, detectors and thermophotovoltaic (TPV) cells that can convert infrared (heat) energy into electrical power.
4” GaSb-Te wafers are now available and can be specified in the same way as for existing 2” and 3” GaSb products. High accuracy orientations (+/-0.1 deg.) and proprietary epitaxy ready finishes are offered to ensure consistent performance in epitaxial growth. Whole 4” wafer etch pit density (EPD) maps (69 points) are supplied to support yield maximisation in the manufacture of large area detector arrays.
The new product offering will be produced at the Group’s Wafer Technology facility in Milton Keynes, UK.
Dr. Mark J. Furlong, General Manager at Wafer Technology, commented:
“Delivering 4” GaSb product is an important milestone for Wafer Technology, especially at a time when the industry is looking to produce larger area epitaxially grown arrays.
“Our 4” GaSb wafers have been very well received by our first customers qualifying this product, so we are looking forward to satisfying new demands for large area GaSb wafers in 2010.”
