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RFMD CMOS switches exceed linearity and isolation requirements

The new CMOS switches from RFMD support 3G and 4G smartphones and deliver "superior" electrostatic discharge performance.
RF Micro Devices (RFMD) has announced it has released its first high-power radio frequency complementary metal-oxide-semiconductor (CMOS) switch which uses high-resistivity silicon substrates.

It is hoped this new technology will support next-generation 3G and 4G smartphones, as well as aerospace and defence applications and wireless infrastructure.

The CMOS-based switches meet or exceed the strict isolation and linearity requirements for innovative smartphones, as well as "superior" electrostatic discharge performance.

According to RFMD, the silicon switches provide a higher-performing and lower-cost 3G solution than competing silicon process technologies, including silicon-on-sapphire.

Included within the switches is the RF1603. This is a three-throw, single-pole switch. The RF1604 is a single-pole, four-throw switch.

"RFMD s CMOS-based cellular switches deliver meaningful performance, size and cost benefits, including excellent linearity and isolation capabilities, which are critical to today s multi-band 3G handsets," stated Eric Creviston, president of RFMD s cellular products group.

He recently asserted that RFMD s PowerSmart platform will see "significant" customer adoption, in part because of the solution s reduced total cost of ownership and energy efficiency. ADNFCR-2855-ID-19618547-ADNFCR
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