News Article
Aixtron reports IAF epitaxy order
IAF has placed an order for an AIX 2800G4 HT, 11x4-inch MOCVD tool with Aixtron.
Aixtron has announced the Fraunhofer Institute for Applied Solid State Physics (IAF) has placed an order for an AIX 2800G4 HT, 11x4-inch metal-organic chemical vapour deposition (MOCVD) tool.
IAF is planning to use the device to further its research into gallium nitride (GaN) on silicon carbide (SiC) compound semiconductors for use in high-power, high-frequency applications.
In particular, for use in the growth of AlGaN/GaN-based high electron mobility transistor structures.
Dr Klaus Koehler, deputy department head of IAF s epitaxy group, commented: "We have already made a good start on the development of GaN on SiC transistors on our existing Aixtron reactors. However, we now need to significantly expand our capabilities."
The institute stated its belief that the use of GaN compound semiconductors will be commercially viable in the near future and this new order will go a long way to making this a reality.
Aixtron has its headquarters in Herzogenrath, Germany, but operates offices throughout Europe, the US, Australia and Asia.
IAF is planning to use the device to further its research into gallium nitride (GaN) on silicon carbide (SiC) compound semiconductors for use in high-power, high-frequency applications.
In particular, for use in the growth of AlGaN/GaN-based high electron mobility transistor structures.
Dr Klaus Koehler, deputy department head of IAF s epitaxy group, commented: "We have already made a good start on the development of GaN on SiC transistors on our existing Aixtron reactors. However, we now need to significantly expand our capabilities."
The institute stated its belief that the use of GaN compound semiconductors will be commercially viable in the near future and this new order will go a long way to making this a reality.
Aixtron has its headquarters in Herzogenrath, Germany, but operates offices throughout Europe, the US, Australia and Asia.
