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Spintronic breakthrough announced

A breakthrough in spintronic technology has been achieved by Intel researchers.
Research carried out by Intel and a group of other firms has resulted in the further development of spintronic technology.

The team has found a way of encoding information regarding the spin of electrons - either "spin up" or "spin down" - in order to provide ultra-low power operation for non-volatile circuits.

Indeed, the development of dilute magnetic semiconductors have, until now, relied on the use of manganese-doped compound semiconductors, such as indium arsenide or gallium arsenide.

Professor of engineering at the University of California - Los Angeles (UCLA) Kang Wang said the team has achieved success on electron field-controlled ferromagnetism at 100 degrees Kelvin and is now in the process of developing applications at room temperature.

A UCLA announcement recently claimed that spintronic technology will form an integral part of the drive to enable the creation of smaller circuitry in the future, as it will enable scientists to create semiconductors which use less power and are more energy efficient.
ADNFCR-2855-ID-19692355-ADNFCR
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