News Article
GaN transistors 'are highly efficient'
GaN transistors could hold the key to greater energy efficiency in the future.
Gallium nitride (GaN) transistors could become the cornerstone of energy-efficient electronics in the future, a new report has argued.
Colombo Bolognesi, professor for millimetre-wave electronics at ETH Zurich, has carried out research highlighting the benefits of GaN compound semiconductors in the development of energy-efficient transistors.
He said that "by using GaN transistors, mobile telephone operators could significantly decrease their energy consumption and reduce their CO2 emissions by several tens of thousand tonnes".
Professor Bolognesi argued that to provide the best efficiency and transfer rates, electrons must flow through the transistor material as easily as possible and GaN-based components offer less resistance than comparable technologies.
Elsewhere, the Institute of High Pressure Physics in Warsaw recently highlighted its role in the development of GaN compound semiconductors over the last 30 years.
Institute director Professor Sylwester Porowski said in an interview with Polish Market Online that the process for delivering high-quality, defect-free GaN crystals is one which has been a high priority for many years now.
Colombo Bolognesi, professor for millimetre-wave electronics at ETH Zurich, has carried out research highlighting the benefits of GaN compound semiconductors in the development of energy-efficient transistors.
He said that "by using GaN transistors, mobile telephone operators could significantly decrease their energy consumption and reduce their CO2 emissions by several tens of thousand tonnes".
Professor Bolognesi argued that to provide the best efficiency and transfer rates, electrons must flow through the transistor material as easily as possible and GaN-based components offer less resistance than comparable technologies.
Elsewhere, the Institute of High Pressure Physics in Warsaw recently highlighted its role in the development of GaN compound semiconductors over the last 30 years.
Institute director Professor Sylwester Porowski said in an interview with Polish Market Online that the process for delivering high-quality, defect-free GaN crystals is one which has been a high priority for many years now.
