SemiSouth Reveals latest SiC JET products
US firm SemiSouth announced two additions to its SiC JFET family. The first is a normally-off, 1700 V, SiC JFET targeted at the auxiliary power supply market for motor drives. The new SJEP170R550, a SiC JFET, is claimed to offer higher blocking voltage (1700 V) and have 5 x lower on-resistance (550 m-Ohm), and ~ 10 x lower output capacitance (COSS of 20 pF) and gate charge (QG of 10 nC) than the best Si MOSFETs.
Dan Schwob, SemiSouth’s VP of Sales & Marketing remarked, “This new 1700 V, normally-off JFET offers the designer additional advantages compared to Si, including higher input voltages, better efficiency, including a significant double-digit efficiency improvement at high input voltages,”
The auxiliary SMP market is reported to have shown great early enthusiasm for this product.
The second product, the SJDP120R085, exhibiting RDSON of 85 m-Ohm, is a normally-on version of the popular, 1200 V, normally-off SiC JFET. According to Dr. Jeff Casady, CTO & VP of Business Development, “Some customers have asked for a normally-on version of our normally-off SiC JFET products due to their topologies. This normally-on version is identical to the normally-off version; except that it has 15% lower RDSON, 2 x higher saturation current, and requires no gate current in the conduction mode.”
Both products releases are available immediately in bare die form or TO-247 packages, and the full specifications are available on the website http://www.semisouth.com/products/products.html .
Since releasing the SiC FET in late 2008, SemiSouth has seen widespread adoption of this power transistor because of its advantages in energy efficiency, reliability, and cost relative to other SiC technologies.
SiC technology enables energy efficient operation of power conversion and power management in telecom power supplies, inverters in solar and high-frequency welding, future automotive electric vehicle platforms, and many other products. Power supplies and power inverters based on this SiC technology are up to 50-75% more energy efficient than their traditional Si based competitors.
They also operate at up to four to eight times higher frequency, and as a result run cooler and be physically much smaller in size. For example, SiC power JFETs are expected to increase the 'fuel' efficiency of hybrid electric vehicles and help make them more affordable.