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RFMD Announces Qualification of Second GaN2 Process Technology

New technology geared at CATV broadband transmission products and is optimized for higher linearity, higher gain and lower voltage operation.

RF Micro Devices today announces the successful qualification of its second high-power Gallium Nitride (GaN) process technology. The second high-power GaN2 HEMT process technology achieves 1-2dB higher gain and 6dB greater linearity than RFMD's first high-power GaN process technology (GaN1) at moderately lower power density.

RFMD's first high-power GaN process technology (GaN1) was qualified in the June 2009 quarter and delivers much higher power density and voltage breakdown than competing technologies. It is ideally suited for high-performance devices such as power amplifiers for radar and communications.

RFMD's GaN2 reliability measurements confirm a useful lifetime of over 17 million hours at a channel temperature of 200 deg C. This industry-leading reliability performance is especially noteworthy because GaN2 is an early stage process on RFMD's GaN technology development roadmap. Additional technologies in development include MMIC process modules with complimentary Integrated Passive Component (IPC) technology.

Bob Van Buskirk, President of the Multi-Market Products Group (MPG), said, "RFMD's high-performance GaN technology is consistently demonstrating industry-leading levels of reliability, allowing our customers to design GaN products that exceed their stringent system reliability specifications. RFMD's GaN technology also enables advanced RF components and products that operate at significantly lower power consumption levels, helping to satisfy the rapidly increasing end-market requirements for energy saving 'green technologies.'"

RFMD is scheduled to present a number of papers on GaN technology and product development at the upcoming Compound Semiconductor Mantech in Portland, Oregon (between May 17-20) and 2010and IEEE MTT International Microwave Symposium in Anaheim, California, (between May 25-27).

The presentations will include the following:

"GaN Applications Beyond the PA for RF Systems"

"GaN for High Power, High Bandwidth Applications"

"Defining Application Spaces for High Power GaN"

"RFMD Takes GaN Mainstream"
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