Kyma reveals low cost nitride on silicon solutions
Kyma Technologies today announced the launch of two new nitride template product lines. The two product lines consist of AlN and GaN on a silicon substrate and are claimed to be crack-free and have low bow. The AlN solution consist of a thin (up to 200nm) layer of crystalline AlN deposited on a Si (111) substrate. Diameters of 2”, 3”, and 4” wafers are currently available. The highly-oriented sub-grain structure and smoothness (less than 1nm RMS) of the crystalline AlN layer is claimed to provide an excellent epi-ready nucleation surface for customers to deposit GaN-based device layers.
Kyma’s GaN product is a thin, smooth (less than 1nm RMS) layer of GaN deposited on top of a Kyma AlN on (111) Si template. The GaN on Si template products currently offered have a 500 nm GaN layer and 2”, 3”, and 4" diameters.
The combination of low cost silicon substrates and low-cost high-performance deposition processes are excellent starting ingredients to make a cost-effective high-quality template. Tamara Stephenson, Kyma’s Technical Sales Engineer, stated, “Our customers have been asking us to develop GaN and AlN template products based on Si substrates. It is a great pleasure to begin accepting orders for these highly anticipated products.” Dr. Ed Preble, Kyma’s COO and VP of Business Development added, “The market pull for Kyma’s template products is strong, especially for these GaN and AlN on Si templates. Important goals for us are to continuously improve and augment our growing portfolio of advanced crystalline III-N substrates according to the expanding needs of the market.”
In the future, Kyma will offer larger diameter templates and will be extending the GaN thickness further, in order to provide lower defect densities and higher thermal conductivity.
