News Article
RFMD to show off latest GaN based RF components
The company will host in-booth demonstrations of its latest products at IEEE International Microwave Symposium (IMS) 2010, in the Anaheim Convention Center, California in Booth #810 in the Exhibition Hall.
RFMD will exhibit its newest GaN High Power Amplifier and Smart Energy Products at the IMS. RFMD's employees will present papers, chair sessions and host proceedings while representing the company's Defense and Power, Broadband Components, Wireless Connectivity, Wireless Products, and GaN Foundry Services business units.
During the conference, the in-booth demonstrations will feature high-power gallium nitride (GaN) products as well as smart energy/advanced metering infrastructure (AMI) Zigbee products.
The GaN in-booth demonstration will feature the RFG1M09180, a high power, high efficiency GaN Doherty amplifier for 3G/4G cellular base stations. It is claimed to achieve 180W peak power at 50V operation while maintaining over 70% peak efficiency.
A single RFG1M09180 amplifier can cover a frequency range of 700MHz to 1000MHz. RFMD's smart energy/AMI demonstration will feature Zigbee products developed in collaboration with Ember Corporation for the RF6525/EM357 reference design.
