News Article
Check out Cree GaN amps at IMS
GaN HEMT RF packaged amplifier and switch products will be demonstrated at the IEEE MTT-S International Microwave Symposium (Booth #836) in the Anaheim Convention Center between May 25 -27, 2010.
The products to be demonstrated include a
CMSA30025S : SPDT MMIC switch (300 MHz to 3 GHz)
CMPA0060025F :25 W MMIC power amplifier (10 MHz to 6 GHz)
CMPA2735075F :75 W MMIC power amplifier (2.7 to 3.5 GHz)
CGH35240F : 240 W transistor (2.9 to 3.5 GHz).
“These product demonstrations are designed to show the benefits of Cree GaN to hardware design engineers seeking ways to improve system level output power, bandwidth and dynamic range beyond what can be achieved with traditional GaAs or silicon LDMOS solutions. They will also have access to our product development engineers to answer questions regarding specific implementation and advantages of these next generation products,” explained Jim Milligan, Cree, Director of RF & Microwave Products.
The CMSA30025S is claimed to be the first GaN MMIC SPDT switch to operate over the 300 MHz to 3 GHz range with less than 0.7 dB insertion loss, 30 dB isolation and less than 20 nec switching speed.
The RF power handling capability of this switch is 25 watts CW at only 0.1 dB compression with an output intercept point higher than 60dBm. The demonstration will show the QFN version of the switch in a test fixture with driver under “hot switching” conditions. Engineers will be able to observe its small size, low power consumption and its ability to be incorporated into a circuit with few additional components, unlike conventional PIN diode switches.
The CMPA0060025F is a packaged GaN MMIC power amplifier has a typical saturated output power of greater than 25 watts CW and power gain of 12 dB. It has typical drain efficiencies of 40% and is packaged within a 0.5 inch square footprint. The amplifier will be demonstrated in an evaluation fixture that is available for customer measurements.
TheCMPA2735075F is the first of a family of radar-centric packaged MMIC power amplifier. It provides 75 watts of pulsed RF power (pulse widths of 300 microseconds typical at 10% duty cycle) with an accompanying power gain of 20 dB over the 2.7 to 3.5 GHz frequency range. This 50 ohm (in/out) matched MMIC typically provides 55% power added efficiency (PAE). The device is housed in a 0.5 inch square package and exhibits superior amplitude and phase droop characteristics.
The CGH35240F is a fully internally matched, 50 ohm power transistor employing GaN on SiC technology for excellent thermal management and reliability. The packaged transistor, measuring 0.70 by 0.95 inches, provides a saturated output power of greater than 220 watts with accompanying power gain of greater than 11 dB over the 2.9 to 3.5 GHz frequency range with typical PAE of 60%. This device will be demonstrated in an evaluation fixture that is available for customer measurements in typical radar applications.
