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Cree reveals quietest GaN amp

The five HEMT MMIC power amplifiers are claimed to expand frequency range and include first commercially available GaN Low Noise Amplifier (LNA)

Cree has developed five new wide bandgap GaN HEMT MMIC amplifiers that increase the range of frequencies available through X-Band. As part of a sample release, the MMICs are currently available as bare die and are targeted to be available in packaged formats later this year.

“ The introduction of these MMICs expands our leadership position in providing GaN solutions that improve system performance beyond what can be realized using traditional GaAs MMIC technology for applications such as communication systems, homeland defense, electronic warfare and radar from S-band through X-band”, said Jim Milligan, Director of RF & Microwave Products. “

“By using our proven GaN MMIC process, the performance of these products can provide an attractive combination of power, efficiency and linearity for the system designer,” he added.

The CMLA2540001D is claimed to be the first commercially available GaN HEMT LNA MMIC. The device operates over the 2.5 to 4 GHz band with small-signal gain of 28 dB and input/output return losses of greater than 10 dB. At an operating voltage of 24 V, the device has a noise figure of better than 2 dB over the entire frequency range, with a typical value of 1.7 dB. Input/output third order intercept points are 12 and 38 dBm, respectively.

These features make this MMIC an excellent choice ideal for a robust LNA with improved linearity and input power handling for radar and other S-band applications. This device occupies a small chip size of only 1.7 mm x 2.5 mm (67 mil x 98 mil).

Designated the CMPA2060025D, this MMIC power amplifier delivers approximately 25 W of output power from 2 to 6 GHz, improving on the performance and extending the frequency coverage of Cree’s CMPA2560025D Series devices down to 2.0 GHz. Power gain over the band is 17 dB with input/output return losses of better than 7 dB. The MMIC is claimed to show excellent power added efficiency (PAE) of typically 35% over the entire frequency range and has dimensions of 3.67 mm x 3.61 mm (144 mil x 142 mil). This product is ideal for homeland defense and electronic warfare applications.

The CMPA2735075D high power amplifiers provide 75 W of output power with a typical PAE of 60% over an instantaneous bandwidth of 2.7 to 3.5 GHz. Ideal for civil and military radar applications that require significant power, gain and efficiency within a small footprint, the CMPA2735075D is one of the smallest MMIC high-power amplifiers covering this bandwidth available in the marketplace, measuring just 4.42 mm x 5 mm (173 mil x 197 mil). The amplifier operates with a supply voltage of 28 Vwith 20 dB of power gain (typical); and is matched to 50 ohms input/output, requiring minimal off-chip bias bypassing.

The CMPA5585025D provides more than 25 W output power over the 5 to 8 GHz band and is ideal for applications in point-to-point radios, satcom, test instrumentation and EMC amplifiers. This MMIC device provides 20 dB power gain with typical power added efficiencies of greater than 38% within a footprint of only 17.25 square millimeters.

TheCMPA801B025D MMIC power amplifier covers the 8 to 11 GHz frequency range with a typical output power capability of 25 W. This MMIC has applications in satellite communications and a variety of civilian and military radar applications. This device features 18 dB of power gain with typical power added efficiencies of 35% in an extremely small size of 4.78 mm x 3.61 mm (188 mil x 142 mil).
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