News Article
Nitronex and Agilent join forces with GaN design kit
The MMIC Process Design Kit (PDK) provides all components needed to develop power amplifiers and operates up to 6 GHz.
North Carolina based Nitronex has revealed that it will be providing the NRF1 MMIC PDK to Agilent for it’s Advanced Design System (ADS). The company announcement coincides with the International Microwave Symposium show in Anaheim, California where Nitronex will present its latest products at Booth #2317 between 25 and 27 May 2010.
Employing 0.5 micron GaN HEMT technology with the PDK should provide the necessary active and passive elements to enable the development of monolithic power amplifiers operating up to 6 GHz.
For active elements, the PDK offers fixed and geometrically-scalable GaN HEMTs and scalable multi-finger Schottky diodes. For passive elements, epi and TFR resistors, circular and square inductors, as well as circular and rectangular MIM capacitors are available. The PDK also offers a full transmission line library including backside vias.
“We are pleased to announce the release of our NRF1 MMIC PDK. We developed the PDK in collaboration with our strategic foundry partners who require high-performance broadband solutions through 6 GHz,” said Ray Crampton, VP of Engineering for Nitronex.
“The functionality and accuracy offered by the multiple types of scalable active and passive elements included in the process design kit are enabling our strategic foundry partners, as well as Nitronex engineers, to realize the full potential of MMIC products with our NRF1 technology”, he added.
