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News Article

Toshiba terrestrial device broadens the spectrum

Microwave power MMIC is suited to RF-Microwave Pre-Amplifier Applications and supports C-band frequency from 5.65 to 8.50GHz

Toshiba have added a 4watt (W) C-Band GaAs Monolithic Microwave Integrated Circuit (MMIC) for satellite applications. The new MMIC will be one of the products showcased in TAEC's booth, # 813, at the 2010 IEEE MTT-S International Microwave Symposium.

 

The TMD0608-4, operates in the 5.65 to 8.50 GHz1 range and has a high gain of 27dB throughout the operating range, and 50 ohm internal matching. The device is well suited for use as a pre-amplifier in C-Band satellite and terrestrial communications. The details of the device are below:

Technical Specifications 50W TGI7785-50L GaN HEMT

Product Characteristics             TMD0608-4
Frequency                                    65 to 8.50 GHz
Band                                              C-Band
Output Power, P1dB (typ.)         35.5dBm
Power Gain, G1dB (typ.)            27.0dB
Drain Current, IDD (typ.)            2.6 Amps

The TMD0608-4 has output power at 1dB gain compression point (P1dB) of 35.5 dBm (typ.), power gain at 1dB gain compression point (G1dB) of 27dB (typ.), and is housed in a hermetically sealed package.


“Use of a broad band, internally matched amplifier can reduce the varieties of board design for different C-band requirements, save board space by minimizing the number of discrete amplification stages, and increase design reliability due to a reduced part count,” said Homayoun Ghani, Business Development Manager of the ‘Microwave, Logic, and Small Signal Devices’ section in TAEC's Discrete Business Unit.

Samples of the Toshiba TMD0608-4 MMIC will be available from the third quarter of 2010.

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