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GCS showcases new diode foundry process at IMS

Friday 28th May 2010

Unlike other THz diodes, this Schottky diode can be integrated with other passive components and eliminates unwanted parasitic elements from the wire bond

Global Communication Semiconductors, a global provider of GaAs and InP pure-play foundry services has showcased its new THz Diode foundry process at the IEEE International Microwave Symposium 2010, May 24-28, in Anaheim, California.

The planar Schottky diode features cutoff frequency (fco) > 1THz with an ideality factor of 1.1. The low diode turn-on voltage (
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