News Article
Ostendo & Oxford unveil GaN-on-Sapphire substrates
The latest offering provides increased efficiency over conventional structures grown on c-plane GaN substrates for HBLED and Laser Diodes.
Ostendo Technologies and Technologies and Devices International (TDI), a subsidiary of Oxford Instruments, are marketing their Semi-Polar (11-22) GaN layer on sapphire substrate wafers.
Produced using Ostendo’s design and TDI’s Hydride Vapor Phase Epitaxy (HVPE) technology, the joint development provides High Brightness Light Emitting Diode (HBLED) and Laser Diode developers to increase optical efficiency over structures grown on c-plane GaN substrates.
