News Article
Mitsubishi Reveals GaN HEMTs for L to C Band
The three High Electron Mobility Transistors (HEMTs) are for 0.5~6 GHz amplifiers which are incorporated into base stations for mobile phones.
Mitsubishi Electric has developed three modules of gallium nitride (GaN) HEMTs with 10W, 20W and 40W outputs. The three devices are for L to C band (0.5~6 GHz) amplifiers, which are incorporated into base stations for mobile phones, very small aperture terminals and other transmission equipment. Sample shipments of the 4.4 mm × 14.0 mm modules will begin from August 2010.
For microwave transmitters, gallium arsenide (GaAs) power amplifiers are most commonly used, but gallium nitride is now garnering more attention, owing to its high breakdown voltage and high saturated electron speed.
Mitsubishi Electric claims to be the first company in the world to manufacture GaN HEMTs in March 2010, launching four models for C-band space applications. HEMTs that use GaN have higher power density, which helps save energy and contributes to making transmitters more compact and lightweight, and expanded operating life.
Key features of the three devices are summarized below.
Product Model Output Power Quiescent 3dB Gain LinearPowe
Power added drain Compression* Gain efficiency current* [Power P3dB] [Glp
(@P3dB, (@ frequency
frequency = =2.6 GHz)] 2.6 GHz)
MGF0846G 46 dBm 46% 340mA 40W 12dB
(40 W)
GaN MGF0843G 43 dBm 48% 170mA 20W 13dB
HEMT (20 W)
MGF0840G 40 dBm 50% 90mA 10W 14dB
(10 W)
* Drain to source voltage of 47V
