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Epistar & Toyoda Gosei Sign Cross License Agreement
The two firms have agreed to share specific technologies regarding III-V compound semiconductor light emitting diodes (“LEDs”), which include InGaN LEDs and AlGaInP LEDs.
Epistar Corporation and Toyoda Gosei have entered a cross license agreement to allow the companies (including subsidiaries) to use each other’s patents for specific technologies in Group III-V compound semiconductor light emitting diodes (“LEDs”), which include InGaN LEDs and AlGaInP LEDs.
Epistar holds valuable patents for high-brightness AlGaInP LEDs and high-power GaN LEDs. Toyoda Gosei likewise holds a number of valuable patents for InGaN LEDs. Epistar and Toyoda Gosei have agreed to construct an environment wherein they will respect and mutually utilize each other’s technologiesin order to further advance the market for LED products.
This agreement will allow both Epistar and Toyoda Gosei significantly more freedom in their development efforts by eliminating the need for concern about each other’s patents. By facilitating research at both companies, new developments in LED technology are anticipated, including an acceleration of research to improve the luminosity of LEDs.
Epistar and Toyoda Gosei each intend to maintain a friendly business relationship and pursue the development of superior high-luminosity LEDs and further expansion of the LED market through fair competition.
