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TriQuint Releases 150mm GaAs Optical pHEMT Process Technology

The firm’s latest TQP15 technology will enable cost effective millimeter wave MMICs for use in applications such as VSAT, satellite communications and point to point radios.

TriQuint Semiconductor, a leading RF front-end product manufacturer and foundry services provider, today announced the release of its latest 150mm Gallium Arsenide (GaAs) commercial foundry process, TQP15, to full production.

TQP15 is targeted at the Ka-band segment and is designed for cost-effectively building millimeter wave (mmWave) MMICs for applications such as VSAT, satellite communications and point to point radios.

Manufactured in TriQuint’s high volume GaAs fabrication facility in Hillsboro, Oregon, TQP15 is the latest offering in the firm’s well-established Pseudomorphic High Electron Mobility Transistor (pHEMT) process portfolio. TQP15 utilizes optical lithography to reduce cost when compared to traditional E-beam based solutions. It also incorporates refractory gate metal architecture which does not exhibit the standard metal gate sinking failure mechanism of non-refractory gate pHEMT processes.

“The TQP15 process leverages TriQuint’s mature manufacturing capabilities used in the production of millions of pHEMT-based wafers,” said Steve Grant, Vice President of Global Operations at TriQuint. “Customers can be confident TQP15 benefits from the stability of the base technology. And it is cost-effective because of the innovative use of optical lithography.”

Throughout the development cycle, the process has been made available to select customer designers to collect feedback and aid process characterization.

Paul Blount, President of Custom MMIC Design Services, notes that “TQP15 offers us an economical high-frequency pHEMT process. We have successfully used TQP15 for high efficiency amplifiers and control functions up to K-band frequencies, and look forward to using this process to grow our product portfolio through Ka band.”

“TriQuint is recognized as a technology leader with its broad portfolio of HBT, E-beam and optical pHEMT technologies. Adding TQP15 solidifies this position. Together with fully released optical pHEMT technologies, TQPED and TQP13-N, and the soon to be released TQP25 process, TriQuint continues to enable the commercialization of mmWave markets,” said Mike Peters, Director of Marketing for Commercial Foundry at TriQuint.

TriQuint will host an interactive customer forum discussing TQP15’s architecture, reliability and performance in conjunction with EuMW on September 27, 2010 from 5:30 – 6:30 PM CEST at the Renaissance Paris la Defense, Bagatelle / Tulle room.

Process Summary and Specifications

Parameter                                                          TQP15

Gate Length (um)                                            0.15

BV (V) (typ)                                                        14

Vp (V)                                                                   -1.0

Idss (mA/mm)                                                   380

Imax (mA/mm)                                                                 580

Ft Peak (GHz)                                                     80

Gm @ Idss (mS/mm)                                      550

NF @15GHz (dB)                                               0.6

Power Density @ 21 GHz (mW/mm)        >700
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