Dow Corning To Produce 100mm Silicon Carbide Epitaxy
The new product expands Dow Corning's product line beyond its existing offerings of 76 mm SiC and 100 mm SiC epitaxial wafers for high power applications.
Dow Corning recently announced that it will begin production of 100 mm silicon carbide (SiC) epitaxy, providing a single source for SiC substrates used in power electronics device manufacturing. The new product expands Dow Corning's product line beyond its existing offerings of 76 mm SiC wafers and epitaxy and 100 mm SiC wafers.
Dow Corning supplies SiC and silicone materials that can be used in high power applications such as high-tech communications, solar and wind energy systems, large scale electrical distribution grids, vehicles, and academic research.
"We are committed to supporting the success of our customers by developing products that enhance performance while being cost effective," said Fred Buether, Commercial Manager, Dow Corning Compound Semiconductor Solutions. "Dow Corning is committed to continuing its leadership in supplying materials solutions to a broad cross section of the global electronics industry. Our global expertise and collaborative approach enable us to deliver solutions that reliably perform, time after time."
Dow Corning provides performance-enhancing solutions to serve the diverse needs of more than 25,000 customers worldwide. A global leader in silicones, silicon-based technology and innovation, Dow Corning offers more than 7,000 products and services via the company's Dow Corning and XIAMETER brands. Dow Corning is a joint venture equally owned by The Dow Chemical Company and Corning, Incorporated. More than half of Dow Corning's annual sales are outside the United States.