+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
 
News Article

Mitsubishi Electric Unveils InGaP HBTs for Amps in Satellite Digital Radios

These amplifiers best operate in combination with the MGF4921AM, Mitsubishi Electric's low noise gallium arsenide (GaAs) high electron mobility transistor already available for the first stage of amplifying.

Mitsubishi Electric Corporation is launching two new models of indium gallium phosphide (InGaP) heterojunction bipolar transistors (HBT) for reception systems in satellite digital radios. These products have a 4-pin full-mold package, and are best used in the second or third stages of low noise amplifiers for L to C band (0.5~6GHz) applications. Shipments will begin on February 7, 2011. Satellite digital audio radio service (SDARS), common in North America since 2001, does not require tuning to adapt to regional broadcasting like analog radio services. Car audio systems therefore use SDARS to access traffic information, entertainment programs and other information services. Low noise amplifiers used in the reception systems of these satellite digital radios are composed of two or three stages. The first stage requires efficient low noise and high gain characteristics, and the second and third stages require high gain and high power characteristics. Mitsubishi Electric will begin shipment of a new series of InGaP-HBTs including the MGF3021AM, which features high gain characteristics, and the MGF3022AM, which has high power characteristics. These amplifiers best operate in combination with the MGF4921AM, Mitsubishi Electric's low noise gallium arsenide (GaAs) high electron mobility transistor already available for the first stage of amplifying. Summary of Sale Model Features Shipment date Monthly production MGF3021AM High gain specification Glp: 22dB 50,000 P1dB: 11dBm pieces (f=2.4GHz) Feb 7, 2011 MGF3022AM High output power specification Glp: 18dB 50,000 P1dB: 16.5dBm pieces (f=2.4GHz) Feb 7, 2011 Product Features 1) InGaP-HBT with high gain, high power and high efficiency - Lineup of high gain (MGF3021AM) and high power (MGF3022AM) InGaP-HBTs - Features high efficiency with collector efficiency of 32% for MGF3021AM and 44% for MGF3022AM at P1dB - Single power supply operation, suitable for the second or third stages of low noise amplifiers 2) Industry standard 4-pin full-mold package - Industry standard 4-pin full-mold package - Unchanged foot pattern from the MGF4921AM, Mitsubishi Electric's low noise amplifier suitable for the first stage With over 85 years of experience in providing reliable, high-quality products to both corporate clients and general consumers all over the world, Mitsubishi Electric Corporation is a recognized leader in the manufacture, marketing and sales of electrical and electronic equipment used in information processing and communications, space development and satellite communications, consumer electronics, industrial technology, energy, transportation and building equipment. The company recorded consolidated group sales of 3,353.2 billion yen (US$ 36.1 billion) in the fiscal year ended March 31, 2010.

×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: