GeneSiC Powers Forward With Project from NASA
The firm has won a Phase I SBIR award entitled “Integrated SiC Super Junction Transistor-Diode Devices for high-power motor control modules operating at 500 oC” in support of future Venus exploration missions.
GeneSiC announces its selection towards development of high temperature power devices for NASA applications. These devices will be optimized for operation under Venus-like ambients (500 °C surface temperatures) for use in motor control power modules.
GeneSiC Semiconductor, a key innovator of novel Silicon Carbide (SiC) devices for high temperature, high power, and ultra-high voltage applications, announces selection of its project titled “Integrated SiC Super Junction Transistor-Diode Devices for high-power motor control modules operating at 500 oC” by the US National Aeronautics and Space Administration (NASA) for a Phase I SBIR award. This SBIR project is focused on the development of Monolithic Integrated SiC JBS diode-Super Junction Transistor (MIDSJT) devices for operation under Venus-like ambients (500 °C surface temperatures). The SiC MIDSJT devices developed in this program will be used to construct motor control power modules for direct integration with Venus exploration rovers.
"We are pleased with the confidence expressed by NASA in our high temperature SiC device solutions. This project will enable GeneSiC to develop industry-leading SiC-based power management technologies through its innovative device and packaging solutions" said Siddarth Sundaresan, GeneSiC’s Director of Technology.
"The SiC MIDSJT devices targeted in this program will allow Kilowatt-level power to be handled with digital precision at temperatures as high as 500 °C. In addition to outer space applications, this novel technology has the potential to revolutionize critical aerospace and geothermal oil drilling hardware requiring ambient temperatures in excess of 200 °C. These application areas are currently limited by the poor high-temperature performance of contemporary Silicon and even SiC based device technologies such as JFETs and MOSFETs" he added.
GeneSiC continues to rapidly enhance the equipment and personnel infrastructure at its Dulles, Virginia facility. The company is aggressively hiring personnel experienced in compound semiconductor device fabrication, semiconductor testing and detector designs.
GeneSiC Semiconductor develops Silicon Carbide (SiC) based semiconductor devices for high temperature, radiation, and power grid applications. This includes development of rectifiers, FETs, bipolar devices as well as particle & photonic detectors. GeneSiC has access to an extensive suite of semiconductor design, fabrication, characterization and testing facilities for such devices.
GeneSiC capitalizes on its core competency in device and process design to develop the best possible SiC devices for its customers. The company distinguishes itself by providing high quality products that are specifically tuned to each customer’s requirements. GeneSiC has prime/sub-contracts from major US Government agencies including ARPA-E, US Dept of Energy, Navy, DARPA, Dept of Homeland Security, Dept of Commerce and other departments within the US Dept. of Defense.