GeneSiC wins power management project from NASA
This SBIR project is focused on the development of Monolithic Integrated SiC JBS diode-Super Junction Transistor devices for operation under Venus-like ambients (500 °C surface temperatures). The SiC MIDSJT devices developed in this program will be used to construct motor control power modules for direct integration with Venus exploration rovers. "We are pleased with the confidence expressed by NASA in our high temperature SiC device solutions. This project will enable GeneSiC to develop industry-leading SiC-based power management technologies through its innovative device and packaging solutions" said Dr. Siddarth Sundaresan, GeneSiC’s Director of Technology. "The SiC MIDSJT devices targeted in this program will allow Kilowatt-level power to be handled with digital precision at temperatures as high as 500 °C. In addition to outer space applications, this novel technology has the potential to revolutionize critical aerospace and geothermal oil drilling hardware requiring ambient temperatures in excess of 200 °C. These application areas are currently limited by the poor high-temperature performance of contemporary Silicon and even SiC based device technologies such as JFETs and MOSFETs" he added.
