IR Wins Industry Accolades for GaN Power Devices
IR’s first commercial integrated power stage product, the iP2010, features on the “EDN Hot 100 Products” list. The device is claimed to deliver higher efficiency and more than double the switching frequency of state-of-the-art silicon-based integrated power stage devices.
International Rectifier (IR) a leader in power management technology has received industry recognition for two of its power management product lines tailored for automotive, and multiphase and point-of-load (POL) applications.
The AUIRF7738L2 and AUIRF7737L2 DirectFET2 MOSFETs received Electronic Design magazine’s Best Electronic Design award for 2010 in the Automotive category. The automotive-qualified AUIRF7738L2 and AUIRF7737L2 offer overall system level size and cost reductions along with superior performance and efficiency when compared to traditional standard plastic packaged components.
Featuring a PCB footprint 60 % smaller than a D2Pak, the AUIRF7738L2 and AUIRF7737L2 DirectFET2 devices deliver exceptionally low on-state resistance (RDS(on)), while the AUIRF7736M2 features a PCB footprint the same size as a 5x6 mm PQFN or SO-8 package with low RDS(on) of 2.5mOhm, making it suitable for more cost sensitive lower power applications.
The devices are qualified according to AEC-Q101 standards, feature an environmentally friendly, lead-free and RoHS compliant bill of materials, and are part of IR’s automotive quality initiative targeting zero defects.
The editors of EDN magazine have voted IR’s first commercial integrated power stage product utilizing IR’s revolutionary Gallium Nitride (GaN)-based power device technology platform to its “EDN Hot 100 Products” list. Designed for multiphase and point-of-load (POL) applications including servers, routers, switches and general purpose POL DC-DC converters, the iP2010 integrates a highly sophisticated, ultra fast PowIRtune driver IC matched to a multi-switch monolithic GaN-based power device.
The device is mounted in a flip chip package platform to deliver higher efficiency and more than double the switching frequency of state-of-the-art silicon-based integrated power stage devices. Available in an LGA package with small footprint, both devices are optimized for very low power loss, feature highly efficient dual-sided cooling, and are RoHS compliant
“As a power management leader, IR continues to invest in R&D in order to introduce solutions that meet the needs of today’s engineering community and we are pleased to receive industry recognition for our automotive qualified DirectFET2 devices and GaN-based integrated iP2010 power stage product,” said Adam White, IR’s Senior VP, Worldwide Sales.
IR’s analog and mixed signal ICs, advanced circuit devices, integrated power systems and components enable high performance computing and reduce energy waste from motors, the world’s single largest consumer of electricity. Leading manufacturers of computers, energy efficient appliances, lighting, automobiles, satellites, aircraft and defense systems rely on IR’s power management benchmarks to power their next generation products.