EPC announce keynote address on Integrated Power Electronic Systems
The title of the speech is, 'Is it the End of the Road for Silicon on Power Management'? and will discuss the reasons why gallium nitride is now capable of replacing silicon power MOSFETs in a broad segment of the $7B market.
'Earlier this week EPC introduced a family of enhancement-mode GaN transistors ranging from 40V and 33ADC to 200V and 12ADC. These products offer performance unachievable in silicon yet, due to the fact they are produced in a standard silicon foundry, can be offered at silicon MOSFET level pricing. We are pleased with this opportunity to discuss the implications of this disruptive product with the participants of this conference,' said Dr. Lidow.
The keynote speech is accompanied by a paper of the same title which will be available in the IEEE Xplore digital library, or at:
www.epc-co.com/ToolsandDesignSupport/ProductTraining.aspx
